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VS-HFA08SD60S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrafast recovery time
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VS-HFA08SD60S-M3
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
TO-252AA (D-PAK)
2, 4
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-252AA (D-PAK)
8A
600 V
1.4 V
18 ns
150 °C
Single die
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Guaranteed avalanche
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Peak repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VRRM
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 100 °C
VALUES
600
8
60
24
14
-55 to +150
UNITS
V
A
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
VBR,
VR
VF
IR
CT
LS
IR = 100 μA
IF = 8 A
IF = 16 A
See fig. 1
IF = 8 A, TJ = 125 °C
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
See fig. 3
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX.
-
1.7
2.1
1.7
5.0
500
25
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1
Document Number: 93474
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000