VS-HFA08SD60S-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-HFA08SD60S-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
18
Reverse recovery time
t_rr
T_J = 25 °C
-
37
Peak recovery current
Reverse recovery charge
Rate of fall of recovery current
I_RRM
Q_rr
dI_(rec)M/dt
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 8 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
55
-
3.5
-
4.5
-
65
-
124
-
240
-
210
MAX.
-
55
90
5.0
8.0
138
360
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction
and storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Weight
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
-
-
-
TYP.
-
MAX.
150
UNITS
°C
-
3.5
-
80
2.0
-
0.07
-
HFA08SD60S
°C/W
g
oz.
Revision: 10-Jul-15
2
Document Number: 93474
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