VS-GT50TP120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A

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10⁰
10^-1
VS-GT50TP120N
Vishay Semiconductors
IGBT
10^-2
10^-3
10^-3
10^-2
10^-1
10^-0
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
100
90
80
25 °C
70
60
125 °C
50
40
30
20
10
0
0
1
2
3
V_F (V)
Fig. 7 - Diode Forward Characteristics
3.5
V_CC = 600 V
3 ^Rg ^{= 15 Ω}
V_GE = - 15 V
2.5 ^TJ ^{= 125 °C}
2
E_rec
1.5
1
0.5
0
0
25
50
75
100
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
3
2.5
2
E_rec
1.5
1
V_CC = 600 V
0.5
I_F = 50 A
V_GE = - 15 V
T_J = 125 °C
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. R_G
Revision: 11-Jun-15
4
Document Number: 94824
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