VS-GT50TP120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A

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100
90 V_GE = 15 V
80
70
25 °C
60
50
40
175 °C
30
20
10
0
0
1
2
3
4
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
V_CE = 50 V
2
4
175 °C
25 °C
6
8
10
12
V_GE (V)
Fig. 2 - IGBT Transfer Characteristics
VS-GT50TP120N
Vishay Semiconductors
20
18
V_CC = 600 V
R_g =15 Ω
16
V_GE = ± 15 V
14
T_J = 125 °C
12
E_on
10
8
6
E_off
4
2
0
0
25
50
75
100
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
20
18
V_CC = 600 V
I_C = 50 A
16 ^VGE ^{= ± 15 V}
14 ^{TJ = 125 °C}
E_on
12
10
8
6
4
E_off
2
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_G
120
Chip
100
Module
80
60
40
R_g = 15 Ω
20 _{VGE = ± 15 V}
T_J = 125 °C
0
0
350
700
1050
V_CE (V)
Fig. 5 - RBSOA
1400
Revision: 11-Jun-15
3
Document Number: 94824
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