VS-GT50TP120N Datasheet, PDF (1/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A

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VS-GT50TP120N
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
INT-A-PAK
FEATURES
• Low V_CE(on) trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 50 A, 25 °C
Speed
Package
Circuit
1200 V
50 A
1.65 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
RMS isolation voltage
V_CES
V_GES
I_C
I_CM ⁽¹⁾
I_F
I_FM ⁽¹⁾
P_D
V_ISOL
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
T_J = 175 °C
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
100
50
100
50
100
405
2500
UNITS
V
A
W
V
IGBT ELECTRICAL SPECIFICATIONS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
V_(BR)CES
V_CE(on)
V_GE(th)
I_CES
I_GES
T_J = 25 °C
V_GE = 15 V, I_C = 50 A, T_J = 25 °C
V_GE = 15 V, I_C = 50 A, T_J = 175 °C
V_CE = V_GE, I_C = 1.4 mA, T_J = 25 °C
V_CE = V_CES, V_GE = 0 V, T_J = 25 °C
V_GE = V_GES, V_CE = 0 V, T_J = 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.90
2.50
5.5
-
-
MAX.
-
2.35
-
7.5
5.0
400
UNITS
V
mA
nA
Revision: 11-Jun-15
1
Document Number: 94824
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000