VS-GT400TH120U Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A

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VS-GT400TH120U
Vishay Semiconductors
900
I_C, module
800
700
600
500
400
300
200
100
0
0
R_g = 1.4 Ω
V_GE = ± 15 V
T_J = 125 °C
200 400
600 800 1000 1200 1400
V_CE (V)
Fig. 5 - RBSOA
0.1
IGBT
0.01
i:
1
2
3
4
r _i [K/W]: 0.0038 0.0212 0.0204 0.0186
τ _i [s]:
0.01 0.02 0.05 0.1
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
800
700
600
500
400
300
200
125 °C
25 °C
100
0
0
0.5
1.0
1.5
2.0
2.5
V_F (V)
Fig. 7 - Diode Forward Characteristics
45
40
35
30
25
20
15
10
5
0
0
E_rec
V_CC = 600 V
R_g = 4.1 Ω
V_GE = -15 V
T_J = 125 °C
200
400
600
800
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 12-Jun-15
4
Document Number: 94854
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