VS-GT400TH120U Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature
T_J max.
Operating junction temperature range T_Jop
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GT400TH120U
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-
-
175
-40
-
150 °C
-40
-
125
-
- 0.064
-
- 0.098 K/W
- 0.032 -
2.5 to 5.0
Nm
3.0 to 5.0
350
g
800
700
600
25 °C
500
400
125 °C
300
200
100
0
0
V_GE = 15 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_CE (V)
Fig. 1 - IGBT Output Characteristics
800
700
V_CE = 20 V
600
125 °C
500
400
300
25 °C
200
100
0
6
7
8
9
10
11
V_GE (V)
Fig. 2 - IGBT Transfer Characteristics
120
V_CC = 600 V
100
R_g = 1.4 Ω
V_GE = ± 15 V
T_J = 125 °C
80
60
E_on
40
20
E_off
0
0
200
400
600
800
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
140
V_CC = 600 V
120 ^IC ^{= 400 A}
E_on
V_GE = ± 15 V
100 ^{TJ = 125 °C}
80
60
40
E_off
20
0
0
3
6
9
12
15
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 12-Jun-15
3
Document Number: 94854
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