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VS-GT400TH120U Datasheet, PDF (1/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A | |||
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www.vishay.com
VS-GT400TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V, 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, 25 °C
Speed
Package
Circuit
1200 V
400 A
1.90 V
8 kHz to 30 kHz
Double INT-A-PAK
Half bridge
FEATURES
⢠Low VCE(on) trench IGBT technology
⢠10 μs short circuit capability
⢠VCE(on) with positive temperature coefficient
⢠Maximum junction temperature 175 °C
⢠Low inductance case
⢠Fast and soft reverse recovery antiparallel FWD
⢠Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
⢠Inverter for motor drive
⢠AC and DC servo drive amplifier
⢠Uninterruptible power supply (UPS)
DESCRIPTION
Vishayâs IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.ï
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM
tp = 1 ms
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
Maximum power dissipation
PD
TJ = 175 °C
RMS isolation voltage
Operating junction temperature range
VISOL
TJ
f = 50 Hz, t = 1 min
MAX.
1200
± 30
750
400
800
400
800
2344
2500
-40 to +150
UNITS
V
A
W
V
°C
Revision: 12-Jun-15
1
Document Number: 94854
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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