VS-GT100TP120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 1200 V, 100 A

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1
0.1
0.01
VS-GT100TP120N
Vishay Semiconductors
IGBT
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
175
150
125
25 °C
100
125 °C
75
50
25
0
0
0.5
1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Forward Characteristics
8
7
V_{CC = 600 V}
R_G = 5.6 Ω
6
V_GE = - 15 V
T_J = 125 °C
5
4
E_REC
3
2
1
0
0
50
100
150
200
I_F (V)
Fig. 8 - Diode Switching Loss vs. I_F
6
5
4
E_REC
3
2
V_{CC = 600 V}
I_F = 100 A
1
V_GE = - 15 V
T_J = 125 °C
0
0
10
20
30
40
50
60
R_G (Ω)
Fig. 9 - Diode Switching Loss vs. R_G
Revision: 11-Jun-15
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Document Number: 93800
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