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VS-GT100TP120N Datasheet, PDF (2/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 1200 V, 100 A
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www.vishay.com
VS-GT100TP120N
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
ISC
LCE
RCC’+EE’
TEST CONDITIONS
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 25 °C
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
187
57
180
149
4.97
4.69
189
58
187
220
7.80
5.85
12.8
0.46
0.32
890
-
0.75
MAX. UNITS
-
-
ns
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
-
-
nF
-
-
A
30
nH
-
m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Forward voltage
VF
IF = 100 A
TJ = 25 °C
TJ = 125 °C
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
TJ = 25 °C
Qrr
TJ = 125 °C
Irr
IF = 100 A, VR = 600 V,
RG = 5.6 
TJ = 25 °C
VGE = -15 V
TJ = 125 °C
TJ = 25 °C
Erec
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.82
1.95
8.1
14.0
81
98
2.99
4.85
MAX. UNITS
2.20
V
-
-
μC
-
-
A
-
-
mJ
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature
Storage temperature range
Junction to case
per ½ module
IGBT
Diode
TJ
TStg
RthJC
Case to sink (Conductive grease applied)
Mounting torque
RthCS
Power terminal screw: M5
Mounting screw: M6
Weight
Weight of module
MIN. TYP. MAX. UNITS
-
-
175 °C
-40
-
125 °C
-
-
0.23
-
-
0.36 K/W
-
0.05
-
2.5 to 5.0
Nm
3.0 to 5.0
-
150
-
g
Revision: 11-Jun-15
2
Document Number: 93800
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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