VS-GT100TP120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 1200 V, 100 A

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200
175
V_GE = 15 V
150
125
25 °C
100
75
175 °C
50
25
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
200
175
V_CE = 50 V
150
125
175 °C
100
75
25 °C
50
25
0
4 5 6 7 8 9 10 11 12
V_GE (V)
Fig. 2 - IGBT Transfer Characteristics
VS-GT100TP120N
Vishay Semiconductors
30
V_{CC = 600 V}
25
R_G = 5.6 Ω
V_GE = ± 15 V
T_J = 125 °C
20
15
E_ON
10
5
E_OFF
0
0
50
100
150
200
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
35
30
25
E_ON
V_{CC = 600 V}
I_C = 100 A
20
V_GE = ± 15 V
T_J = 125 °C
15
10
5
E_OFF
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_G
250
Module
200
150
100
50
0
0
R_G = 5.6 Ω
V_GE = ± 15 V
T_J = 125 °C
350
700
1050
V_CE (V)
Fig. 5 - RBSOA
1400
Revision: 11-Jun-15
3
Document Number: 93800
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