VS-GB75TP120U Datasheet, PDF (4/6 Pages) Vishay Siliconix – 10 μs short circuit capability

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VS-GB75TP120U
Vishay Semiconductors
15
V_CC = 600 V
12
9
6
3
I_C = 75 A
T_J = 25 °C
0
0
250
500
750
1000
Q_g (nC)
Fig. 5 - Gate Charge Characteristics
10¹
C_ies
10⁰
C_oes
C_res
10^-1
0
5 10 15 20 25 30 35
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Current
10³
t_d(off)
t_d(on)
t_f
10²
t_r
10¹
0
V_CC = 600 V
R_g = 15 Ω
V_GE = ± 15 V
T_J = 125 °C
25 50 75 100 125 150 175
I_C (A)
Fig. 7 - Typical Switching Times vs. I_C
10⁴
t_d(off)
10³
t_r
t_d(on)
t_f
10²
V_CC = 600 V
I_C = 75 A
V_GE = ± 15 V
T_J = 125 °C
10^-1
0
20 40
60
80 100 120
R_g (Ω)
Fig. 8 - Typical Switching Times vs.Gate Resistance R_g
150
125
100
25 °C
125 °C
75
50
25
0
0
0.5
1
1.5
2
2.5
3
V_F (V)
Fig. 9 - Diode Typical Forward Characteristics
Revision: 10-Jun-15
4
Document Number: 94822
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