VS-GB75TP120U Datasheet, PDF (1/6 Pages) Vishay Siliconix – 10 μs short circuit capability

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VS-GB75TP120U
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 75 A
INT-A-PAK
FEATURES
• High short circuit capability, self limiting to 6 x I_C
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Rugged with ultrafast performance
• Square RBSOA
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 75 A, 25 °C
Speed
Package
Circuit
1200 V
75 A
3.2 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• UPS
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current
Pulsed collector current
I_C
I_CM ⁽¹⁾
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
Diode continuous forward current
I_F
Diode maximum forward current
I_FM
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
t_SC
T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
I²t-value, diode
I²t
V_R = 0 V, t = 10 ms, T_J = 125 °C
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
105
75
150
75
150
500
10
2500
1170
UNITS
V
A
W
μs
V
A²s
Revision: 10-Jun-15
1
Document Number: 94822
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000