VS-GB75TP120U Datasheet, PDF (3/6 Pages) Vishay Siliconix – 10 μs short circuit capability

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VS-GB75TP120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
IGBT (per 1/2 module)
Junction to case
Diode (per 1/2 module)
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M5
Mounting screw: M6
Weight of module
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
-
0.25
-
-
0.40 K/W
-
0.05
-
2.5 to 5.0
Nm
3.0 to 5.0
160
g
150
V_GE = 15 V
125
100
75
25 °C
125 °C
50
25
0
0
1
2
3
4
5
V_CE (V)
Fig. 1 - Typical Output Characteristics
150
V_CE = 20 V
125
100
75
125 °C
25 °C
50
25
0
5
6
7
8
9 10 11 12
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
16
V_CC = 600 V
14
R_g = 15 Ω
V_GE = ± 15 V
12
T_J = 125 °C
10
E_on
8
6
E_off
4
2
0
0
25
50
75 100 125 150
I_C (A)
Fig. 3 - Total Switching Loss vs. I_C
16
V_CC = 600 V
14 I_C = 75 A
V_GE = ± 15 V
12 _{TJ = 125 °C}
E_on
10
8
6
4
E_off
2
0
0
10
20
30
40
50
R_g (Ω)
Fig. 4 - Total Switching Loss vs. R_g
Revision: 10-Jun-15
3
Document Number: 94822
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