VS-GB600AH120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x IC

www.vishay.com
20
V_CC = 600 V
10
0
- 10
0
I_C = 600 A
T_J = 25 °C
1
2
3
4
5
6
Q_g (μC)
Fig. 5 - Gate Charge Characteristics
10²
C_ies
10¹
C_oes
C_res
10⁰
VS-GB600AH120N
Vishay Semiconductors
10³
t_d(off)
t_d(on)
10²
t_r
t_f
10¹
0
V_CC = 600 V
R_g = 3 Ω
V_GE = ± 15 V
T_J = 125 °C
200 400 600 800 1000 1200
I_C (A)
Fig. 7 - Typical Switching Times
10⁴
V_CC = 600 V
I_C = 600 A
V_GE = ± 15 V
T_J = 125 °C
10³
10²
t_d(off)
t_d(on)
t_r
t_f
10^-1
0
5 10 15 20 25 30 35
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage
10¹
0
5
10
15
20
25
R_g (Ω)
Fig. 8 - Typical Switching Times vs. Gate Resistance R_g
1200
1000
800
600
25 °C
125 °C
400
200
0
0
1
2
3
V_F (V)
Fig. 9 - Typical forward Characteristics (Diode)
Revision: 22-Oct-15
4
Document Number: 94791
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000