VS-GB600AH120N Datasheet, PDF (1/6 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x IC

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VS-GB600AH120N
Vishay Semiconductors
Molding Type Module IGBT,
1-in-1 Package, 1200 V and 600 A
Double INT-A-PAK
FEATURES
• High short circuit capability, self limiting to 6 x I_C
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 600 A, 25 °C
Speed
Package
Circuit
1200 V
600 A
1.9 V
8 kHz to 30 kHz
Double INT-A-PAK
Single switch with AP diode
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welder at f_sw up to 20 kHz
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current at T_J = 150 °C
T_C = 25 °C
I_C
T_C = 80 °C
Pulsed collector current
I_CM ⁽¹⁾
T_C = 80 °C
Diode continuous forward current
I_F
Diode maximum forward current
I_FM
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
t_SC
T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
I²t-value, diode
I²t
V_R = 0 V, t = 10 ms, T_J = 125 °C
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
910
600
1200
600
1200
3125
10
2500
74 000
UNITS
V
A
W
μs
V
A²s
Revision: 22-Oct-15
1
Document Number: 94791
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000