VS-GB600AH120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x IC

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating temperature range
T_J
Storage temperature range
T_Stg
Junction to case
per module
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GB600AH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-40
-
150 °C
-40
-
125 °C
-
-
0.04
-
-
0.09 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
310
g
1200
900
600
25 °C
125 °C
300
V_GE = 15 V
0
0
1
2
3
4
V_CE (V)
Fig. 1 - Typical Output Characteristics
1200
1000
V_CE = 20 V
800
600
400
25 °C
125 °C
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
160
V_CC = 600 V
140 R_g = 3 Ω
V_GE = ± 15 V
120 _{TJ = 125 °C}
100
80
Eoff
Eon
60
40
20
0
0 200 400 600 800 1000 1200
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
160
140
E_on
120
100
80
E_off
60
40
20
0
0
5
10
V_CC = 600 V
I_C = 600 A
VGE = ± 15 V
T_J = 125 °C
15
20
25
R_g (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 22-Oct-15
3
Document Number: 94791
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