VS-GB50LP120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A

1000
100
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t_d(off)
t_d(on)
t_r
t_f
VS-GB50LP120N
Vishay Semiconductors
1000
t_d(off)
t_d(on)
100
t_r
t_f
10
0
20
40
60
80 100 120
93418_07
I_C (A)
Fig. 7 - Typical Switching Time vs. I_C
T_J = 125 °C, V_CC = 600 V, V_GE = ± 15 V, R_g = 18 
10
0
10
20
30
40
50
60
93418_08
R_g (Ω)
Fig. 8 - Typical Switching Time vs. Gate Resistance
T_J = 125 °C, V_CC = 600 V, V_GE = ± 15 V, I_C = 50 A
100
90
80
70
25 °C
125 °C
60
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
93418_09
V_F (V)
Fig. 9 - Typical Forward Characteristics (Diode)
1
Diode
IGBT
0.1
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
93418_10
t_p (s)
Fig. 10 - Transient Thermal Impedance
Revision: 10-Jun-15
4
Document Number: 93418
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