VS-GB50LP120N Datasheet, PDF (1/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A

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VS-GB50LP120N
Vishay Semiconductors
Molding Type Module IGBT, Chopper in 1 Package,
1200 V and 50 A
INT-A-PAK
FEATURES
• High short circuit capability, self limiting to 6 x I_C
• 10 μs short circuit capability
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• V_CE(on) with positive temperature coefficient
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 50 A, 25 °C
Speed
Package
Circuit
1200 V
50 A
1.7 V
8 kHz to 30 kHz
INT-A-PAK
Chopper low side switch
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current
Pulsed collector current
I_C
I_CM ⁽¹⁾
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
Diode continuous forward current
I_F
Diode maximum forward current
I_FM
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
I²t-value, diode
t_SC
T_J = 125 °C
I²t
V_R = 0 V, t = 10 ms, T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature}
MAX.
1200
± 20
100
50
100
50
100
446
10
420
2500
UNITS
V
A
W
μs
A²s
V
IGBT ELECTRICAL SPECIFICATIONS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
Zero gate voltage collector current
Gate to emitter leakage current
V_(BR)CES
V_CE(on)
V_GE(th)
I_CES
I_GES
T_J = 25 °C
V_GE = 15 V, I_C = 50 A, T_J = 25 °C
V_GE = 15 V, I_C = 50 A, T_J = 125 °C
V_CE = V_GE, I_C = 2 mA, T_J = 25 °C
V_CE = V_CES, V_GE = 0 V, T_J = 25 °C
V_GE = V_GES, V_CE = 0 V, T_J = 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.70
1.95
6.2
-
-
MAX.
-
-
-
7.0
1.0
400
UNITS
V
mA
nA
Revision: 10-Jun-15
1
Document Number: 93418
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000