VS-GB50LP120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A

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171
142.5
114
T_J = 25 °C
85.5
T_J = 125 °C
57
28.5
0
0
1
2
3
4
93418_01
171
V_CE (V)
Fig. 1 - Typical Output Characteristics
V_GE = 15 V
142.5
114
85.5
57
T_J = 125 °C
28.5
T_J = 25 °C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
93418_02
10
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
V_CE = 20 V
9
8
7
6
E_off
5
E_on
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
93418_03
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
T_J = 125 °C, V_CC = 600 V, V_GE = ± 15 V, R_g = 18 
VS-GB50LP120N
Vishay Semiconductors
10
9
8
7
E_on
6
5
E_off
4
3
2
1
0
0
10
20
30
40
50
60
93418_04
R_g (Ω)
Fig. 4 - Switching Loss vs. Gate Resistance
T_J = 125 °C, V_CC = 600 V, V_GE = ± 15 V, I_C = 50 A
20
15
V_CC = 600 V
V_CC = 900 V
10
5
0
0
93418_05
10
0.1 0.2 0.3 0.4 0.5 0.6
Q_g (μC)
Fig. 5 - Gate Charge Characteristics
I_C = 50 A, T_J = 25 °C
C_ies
1
C_oes
C_res
0.1
0
5 10 15 20 25 30 35
93418_06
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Revision: 10-Jun-15
3
Document Number: 93418
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