VS-GB150TH120U Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A

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VS-GB150TH120U
Vishay Semiconductors
350
300
250
I_C, Module
200
150
100
R_g = 6.8 Ω
50 V_GE = ± 15 V
T_J = 125 °C
0
0
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
10⁰
IGBT
10^-1
10^-2
10^-3
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
300
250
25 °C
200
150
125 °C
100
50
0
0
0.5
1
1.5 2
2.5 3
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
12
10
E_rec
8
6
4
V_CC = 600 V
2
R_g = 6.8 Ω
V_GE = - 15 V
T_J = 125 °C
0
0
50
100 150 200 250 300
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 10-Jun-15
4
Document Number: 94714
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