VS-GB150TH120U Datasheet, PDF (1/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A

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VS-GB150TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 150 A
Double INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 150 A, T_J = 25 °C
Speed
Package
Circuit
1200 V
150 A
3.10 V
8 kHz to 30 kHz
Double INT-A-PAK
Half bridge
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V_CE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inductive heating
• Electronic welder
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
V_CES
V_GES
I_C
I_CM ⁽¹⁾
I_F
I_FM ⁽¹⁾
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
T_C = 80 °C
t_p = 1 ms
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
T_SC
T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: Pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
280
150
300
150
300
1147
10
2500
UNITS
V
A
W
μs
V
Revision: 10-Jun-15
1
Document Number: 94714
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000