VS-GB150TH120U Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A

www.vishay.com
VS-GB150TH120U
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
T_J
T_Stg
R_JC
Case to sink (Conductive grease applied)
Mounting torque
R_CS
Power terminal screw: M5
Mounting screw: M6
Weight
Weight of module
MIN. TYP. MAX. UNITS
-
-
150 °C
-40
-
125 °C
-
- 0.109
-
- 0.180 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
-
300
-
g
300
V_GE = 15 V
250
200
25 °C
150
125 °C
100
50
0
0
1
2
3
4
5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
300
V_CE = 20 V
250
200
125 °C
150
100
25 °C
50
0
4
5
6
78
9 10 11
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
60
V_CC = 600 V
50
R_g = 6.8 Ω
V_GE = ± 15 V
T_J = 125 °C
40
Eon
30
20
Eoff
10
0
0
50 100 150 200 250 300
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
80
V_CC = 600 V
70 I_C = 150 A
V_GE = ± 15 V
60 _{TJ = 125 °C}
50
E_on
40
30
E_off
20
10
0
0
10
20
30
40
50
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 10-Jun-15
3
Document Number: 94714
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000