VS-GB100TP120N Datasheet, PDF (4/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

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10⁰
10^-1
VS-GB100TP120N
Vishay Semiconductors
IGBT
10^-2
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
175
150
25 °C
125
125 °C
100
75
50
25
0
0
0.5
1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Forward Characteristics
10
9
V_CC = 600 V
R_g = 5.6 Ω
8 ^VGE ^{= - 15 V}
7
T_J = 125 °C
6
5
E_rec
4
3
2
1
0
0 25 50 75 100 125 150 175 200
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_C
8
7
6
5
E_rec
4
3
2 ^VCC ^{= 600 V}
I_C = 100 A
1 V_GE = - 15 V
T_J = 125 °C
0
0
10
20 30 40
50 60
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. R_g
Revision: 10-Jun-15
4
Document Number: 94821
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