VS-GB100TP120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

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200
175
150
25 °C
125
125 °C
100
75
50
25
V_GE = 15 V
0
0
0.5
1
1.5
2
2.5
3
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
VS-GB100TP120N
Vishay Semiconductors
30
V_CC = 600 V
25
R_g = 5.6 Ω
V_GE = ± 15 V
T_J = 125 °C
20
15
10
E_off
5
E_on
0
0 25 50 75 100 125 150 175 200
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
200
175
150
125 °C
125
100
25 °C
75
50
25
V_CE = 20 V
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
40
V_CC = 600 V
35 I_C = 100 A
V_GE = ± 15 V
30 _{TJ = 125 °C}
25
E_on
20
15
10
E_off
5
0
0
10 20
30
40
50 60
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
220
200
180
160
I_C, Module
140
120
100
80
60
40 R_g = 5.6 Ω
20
0
V_GE = ± 15 V
T_J = 125 °C
0 250 500
750 1000 1250 1500
V_CE (V)
Fig. 5 - RBSOA
Revision: 10-Jun-15
3
Document Number: 94821
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