VS-GB100TP120N Datasheet, PDF (1/6 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

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VS-GB100TP120N
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 100 A
INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 100 A, 25 °C
Speed
Package
Circuit
1200 V
100 A
1.80 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
FEATURES
• High short circuit capability, self limiting to 6 x I_C
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
I²t-value, diode
V_CES
V_GES
I_C
I_CM ⁽¹⁾
I_F
I_FM
P_D
t_SC
V_ISOL
I²t
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
T_J = 150 °C
T_J = 125 °C
f = 50 Hz, t = 1 min
V_R = 0 V, t = 10 ms, T_J = 125 °C
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
200
100
200
100
200
650
10
2500
1050
UNITS
V
A
W
μs
V
A²s
IGBT ELECTRICAL SPECIFICATIONS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
V_(BR)CES
V_CE(on)
V_GE(th)
I_CES
I_GES
V_GE = 0 V, I_C = 1.0 mA, T_J = 25 °C
V_GE = 15 V, I_C = 100 A, T_J = 25 °C
V_GE = 15 V, I_C = 100 A, T_J = 125 °C
V_CE = V_GE, I_C = 4.0 mA, T_J = 25 °C
V_CE = V_CES, V_GE = 0 V, T_J = 25 °C
V_GE = V_GES, V_CE = 0 V, T_J = 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.80
2.05
6.2
-
-
MAX.
-
2.20
-
7.0
5.0
400
UNITS
V
mA
nA
Revision: 10-Jun-15
1
Document Number: 94821
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000