VS-GA200TH60S Datasheet, PDF (4/7 Pages) Vishay Siliconix – High short circuit capability

www.vishay.com
VS-GA200TH60S
Vishay Semiconductors
20
18 ^VCC ^{= 300 V}
16
14
12
10
8
6
4
2
I_C = 100 A
T_J = 25 °C
0
0 100 200 300 400 500 600 700
Q_g (nC)
Fig. 5 - Gate Charge Characteristics
10³
t_d(off)
10²
10¹
0
t_d(on)
t_r
t_f
V_CC = 300 V
R_g = 4.7 Ω
V_GE = ± 15 V
T_J = 125 °C
100
200
300
400
I_C (A)
Fig. 7 - Switching Times vs. I_C
10²
C_ies
10¹
C_oes
10⁰
C_res
10^-1
0
5 10 15 20 25 30 35
V_CE (V)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
10⁴
V_CC = 300 V
I_C = 200 A
V_GE = ± 15 V
T_J = 125 °C
10³
10²
t_d(off)
t_d(on)
t_r
t_f
10¹
0
20
40
60
R_g (Ω)
Fig. 8 - Typical Switching Times vs. Gate Resistance R_g
400
350
300
25 °C
250
200
125 °C
150
100
50
0
0
0.5
1
1.5
2
V_F (V)
Fig. 9 - Diode Typical Forward Characteristics
Revision: 10-Jun-15
4
Document Number: 94762
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000