VS-GA200TH60S Datasheet, PDF (1/7 Pages) Vishay Siliconix – High short circuit capability

www.vishay.com
VS-GA200TH60S
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 200 A
Double INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 200 A, 25 °C
Speed
Package
Circuit
600 V
200 A
1.9 V
DC to 1 kHz
Double INT-A-PAK
Half bridge
FEATURES
• High short circuit capability
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Latch-up free
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current
T_C = 25 °C
I_C
T_C = 80 °C
Pulsed collector current
I_CM ⁽¹⁾
t_p = 1 ms
Diode continuous forward current
I_F
T_C = 80 °C
Diode maximum forward current
I_FM
t_p = 1 ms
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
t_SC
T_C = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
I²t-value, diode
I²t
V_R= 0 V, t = 10 ms, T_J = 125 °C
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
600
± 20
260
200
400
200
400
1042
10
2500
4900
UNITS
V
A
W
μs
V
A²s
Revision: 10-Jun-15
1
Document Number: 94762
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000