VS-GA200TH60S Datasheet, PDF (3/7 Pages) Vishay Siliconix – High short circuit capability

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VS-GA200TH60S
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
-
0.12
-
-
0.27 K/W
-
0.03
-
2.5 to 5.0
Nm
3.0 to 6.0
325
g
400
V_GE = 15 V
350
300
250
200
25 °C
125 °C
150
100
50
0
0
1
2
3
4
V_CE (V)
Fig. 1 - Typical Output Characteristics
400
V_CE = 20 V
350
300
25 °C
250
125 °C
200
150
100
50
0
4
6
8
10
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
20
V_CC = 300 V
18 _{Rg = 4.7 Ω}
E_off
16 ^VGE ^{= ± 15 V}
14 ^{TJ = 125 °C}
12
10
E_on
8
6
4
2
0
0
100
200
300
400
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
30
V_CC = 300 V
25
I_C = 200 A
V_GE = ± 15 V
E_on
T_J = 125 °C
20
E_off
15
10
5
0
0
5
10
15
20
25 30
R_g (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 10-Jun-15
3
Document Number: 94762
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