VS-GA100TS60SFPBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Optimized for hard switching speed

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60
T_J = 125 °C
V_CE = 480 V
50 _{VGE = 15 V}
R_g = 15 Ω
E_off
40
30
20
10
E_on
0
0
40
80
120
160
I_C - Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
1000
100
T_J = 125 °C
10
T_J = 25 °C
VS-GA100TS60SFPbF
Vishay Semiconductors
1000
V_R = 200 V
I_F = 50 A, T_J = 125 °C
100
I_F = 50 A, T_J = 25 °C
10
100
1000
dI_Fdt (A/μs)
Fig. 9 - Typical Reverse Recovery Time vs. dI_F/dt
100
V_R = 200 V
I_F = 50 A, T_J = 125 °C
10
I_F = 50 A, T_J = 25 °C
1
0
0.5
1
1.5
2
2.5
V_FM - Forward Voltage Drop (V)
Fig. 8 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1
100
1000
dI_Fdt (A/μs)
Fig. 10 - Typical Reverse Recovery Current vs. dI_F/dt
10 000
V_R = 200 V
I_F = 50 A, T_J = 125 °C
1000
I_F = 50 A, T_J = 25 °C
100
100
1000
dI_Fdt (A/μs)
Fig. 11 - Typical Stored Charge vs. dI_F/dt
Revision: 10-Jun-15
4
Document Number: 94544
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