VS-GA100TS60SFPBF Datasheet, PDF (3/7 Pages) Vishay Siliconix – Optimized for hard switching speed

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1000
V_GE = 15 V
100
T_J = 25 °C
T_J = 125 °C
10
0.6 0.8
1
1.2 1.4 1.6 1.8
V_CE - Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
T_J = 125 °C
100
T_J = 25 °C
10
1
5.5
V_CE = 10 V
380 μs PULSE WIDTH
6.5
7.5
8.5
V_GE - Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
240
200
160
120
80
40
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Fig. 3 - Maximum Collector Current vs. Case Temperature
VS-GA100TS60SFPbF
Vishay Semiconductors
1.5
I_C = 200 A
1.3
I_C = 100 A
1.1
I_C = 50 A
0.9
0.7
25
50
75
100
125
150
T_J - Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
20
V_CC = 400 V
I_C = 100 A
15
10
5
0
0 100 200 300 400 500 600 700
Q_g - Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
35
T_J = 25 °C, V_CE = 480 V
30 ^VGE ^{= 15 V, I}C ^{= 100 A}
E_off
25
20
15
E_on
10
5
0
10
20
30
40
50
R_g - Gate Resistance (Ω)
Fig. 6 - Typical Switching Losses vs. Gate Resistance
Revision: 10-Jun-15
3
Document Number: 94544
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