VS-GA100TS60SFPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Optimized for hard switching speed

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VS-GA100TS60SFPbF
Vishay Semiconductors
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge
Gate to emitter charge
Gate to collector charge
Rise time
Fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Q_g
Q_ge
Q_gc
t_r
t_f
E_on
E_off
E_ts
E_on
E_off
E_ts
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
t_rr
I_rr
Q_rr
I_C = 100 A
V_CC = 400 V
V_GE = 15 V
I_C = 100 A
V_CC = 480 V
V_GE = 15 V
R_g = 15 
T_J = 25 °C
I_C = 100 A, V_CC = 480 V
V_GE = 15 V, R_g = 15 
T_J = 125 °C
V_GE = 0 V 
V_CC = 30 V
f = 1.0 MHz
I_F = 50 A
dI_F/dt = 200 A/μs
V_rr = 200 V
I_F = 50 A
dI_F/dt = 200 A/μs
V_rr = 200 V, T_J = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
640
108
230
0.45
1.0
4
23
27
6
35
41
16 250
1040
190
91
10.6
500
180
17
1633
MAX.
700
120
300
-
-
6
29
35
12
40
52
-
-
-
155
15
900
344
20.5
2315
UNITS
nC
μs
mJ
pF
ns
A
nC
ns
A
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case
per switch
per diode
T_J
T_Stg
R_thJC
Case to sink per module
Mounting torque
case to heatsink
case to terminal 1, 2, 3
R_thCS
Weight




MIN.
-40
-40
-
-
-
-
-
-
TYP.
-
-
-
-
0.1
-
-
185
MAX.
150
125
0.16
0.48
-
4
3
-
UNITS
°C
°C/W
Nm
g
Revision: 10-Jun-15
2
Document Number: 94544
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000