VS-8TQ080S-M3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 8 A

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180
175
170
DC
165
160
Square wave (D = 0.50)
155 _{80 % rated VR applied}
150
145
See note (1)
140
0
2
4
6
8
10 12
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
VS-8TQ080S-M3, VS-8TQ100S-M3
Vishay Semiconductors
7
D = 0.20
6
D = 0.25
D = 0.33
5
D = 0.50
D = 0.75
4
RMS limit
3
DC
2
1
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
At any rated load condition
and with rated V_RRM applied
following surge
100
10
100
1000
10 000
t_p - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current
monitor
L
IRFP460
R_g = 25 Ω
High-speed
switch
Freewheel
diode
+ ^{Vd = 25 V}
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Revision: 28-Feb-14
4
Document Number: 94946
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