VS-8TQ080S-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 8 A

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VS-8TQ080S-M3, VS-8TQ100S-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 8 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
E_AS
Package
Diode variation
8A
80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
7.5 mJ
TO-263AB (D²PAK)
Single die
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
Range
t_p = 5 μs sine
8 A_pk, T_J = 125 °C
Range
VALUES
8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-8TQ080S-M3
80
VS-8TQ100S-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current 
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current 
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
50 % duty cycle at T_C = 157 °C, rectangular waveform
8
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
850
230
7.50
0.50
UNITS
A
A
mJ
A
Revision: 28-Feb-14
1
Document Number: 94946
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000