VS-8TQ080S-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 8 A

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VS-8TQ080S-M3, VS-8TQ100S-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
8A
16 A
T_J = 25 °C
8A
16 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance, 
junction to case
T_J, T_Stg
DC operation 
R_thJC
See fig. 4
Typical thermal resistance, 
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D²PAK
VALUES
- 55 to 175
UNITS
°C
2.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
8TQ080S
8TQ100S
Revision: 28-Feb-14
2
Document Number: 94946
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