VS-8ETH06HN3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

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60
V_R = 390 V
T_J = 125 °C
50
T_J = 25 °C
40
30
20
I_F = 16 A
I_F = 8 A
10
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 8);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
VS-8ETH06HN3
Vishay Semiconductors
400
V_R = 390 V
350 T_J = 125 °C
T_J = 25 °C
300
250
I_F = 16 A
I_F = 8 A
200
150
100
50
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
4
Document Number: 94768
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