VS-8ETH06HN3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

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1000
VS-8ETH06HN3
Vishay Semiconductors
100
T_J = 25 °C
10
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
0.1
0.01
0.00001
Single pulse
(thermal resistance)
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.1
1
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics
180
170
160
DC
150
Square wave (D = 0.50)
140
Rated V_R applied
130
See note (1)
120
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
18
16
RMS limit
14
12
10
8
6
4
DC
2
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 10-Jul-15
3
Document Number: 94768
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