VS-8ETH06HN3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

www.vishay.com
VS-8ETH06HN3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
18
I_F = 8 A, dI_F/dt = 100 A/μs, V_R = 30 V
t_rr
T_J = 25 °C
-
20
-
25
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
40
I_F = 8 A
-
2.4
dI_F/dt = 200 A/μs
V_R = 390 V
-
4.8
-
25
-
120
t_rr
I_RRM
Q_rr
T_J = 125 °C
I_F = 8 A
-
33
dI_F/dt = 600 A/μs
-
12
V_R = 390 V
-
220
MAX.
-
-
-
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance, junction to case
Thermal resistance, junction to ambient 
per leg
Thermal resistance,
case to heatsink
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.4
-
MAX.
175
2
70
0.5
-
2.0
-
0.07
-
12
-
(10)
8ETH06H
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
100
10
T_J = 175 °C
1
T_J = 150 °C
T_J = 25 °C
0.1
0
1
2
3
4
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15
2
Document Number: 94768
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000