VS-8ETH03SPBF Datasheet, PDF (4/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

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180
170
DC
160
Square wave (D = 0.50)
150 ^{Rated VR applied}
140
See note (1)
130
0
2
4
6
8 10 12 14
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10
8
6
4
2
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
VS-8ETH03SPbF, VS-8ETH03-1PbF
Vishay Semiconductors
100
I_F = 8 A , T_J = 125 °C
I_F = 8 A , T_J = 25 °C
10
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
1000
I_F = 8 A , T_J = 125 °C
100
I_F = 8 A , T_J = 25 °C
10
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 09-Jul-15
4
Document Number: 94025
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