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VS-8ETH03SPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt
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VS-8ETH03SPbF, VS-8ETH03-1PbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
TO-263AB (D2PAK)
Base
cathode
2
TO-262AA
2
1
3
N/C
Anode
VS-8ETH03SPbF
1
N/C
3
Anode
VS-8ETH03-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
8A
300 V
0.83 V
35 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time. 
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics. 
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives. 
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 155 °C
TC = 25 °C
MAX.
300
8
100
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
300
IF = 8 A
-
Forward voltage
VF
IF = 8 A, TJ = 125 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT
VR = 300 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
UNITS
V
μA
pF
nH
Revision: 09-Jul-15
1
Document Number: 94025
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000