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VS-8ETH03SPBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt | |||
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www.vishay.com
VS-8ETH03SPbF, VS-8ETH03-1PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V
-
-
trr
TJ = 25 °C
-
27
TJ = 125 °C
-
40
TJ = 25 °C
IF = 8 Aï
-
2.2
IRRM
dIF/dt = - 200 A/μsï
TJ = 125 °C
VR = 200 V
-
5.3
TJ = 25 °C
Qrr
TJ = 125 °C
-
30
-
106
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage ï
temperature range
Thermal resistance, ï
junction to case per leg
Thermal resistance,ï
junction to ambient per leg
Thermal resistance,ï
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-263AB (D2PAK)
Case style TO-262
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
UNITS
°C
1.45
2.5
-
70
°C/W
0.2
-
2.0
-
0.07
-
-
12
(10)
8ETH03S
8ETH03-1
g
oz.
kgf · cm
(lbf · in)
Revision: 09-Jul-15
2
Document Number: 94025
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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