VS-50TPS12L-M3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR, 50 A

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560
At any rated load condition and with
510
rated V_RRM applied following surge.
Initial T_j = 150 °C
at 60 Hz 0.0083 s
460
at 50 Hz 0.0100 s
410
360
310
260
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
VS-50TPS12L-M3
Vishay Semiconductors
650
Maximum non repetitive surge current
600
vs. pulse train duration. Control of
conduction may not be maintained.
550
Initial Tj = 150 °C
No voltage reapplied
500
rated V_RRM reapplied
450
400
350
300
250
0.01
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T_J = 125 °C
10
T_J = 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On - state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100 _{Rectangular gate pulse}
a) Recommended load line for rated dI/dt: 20 V, 30 Ω
tr = 0.5 μs, tp ≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω
t_r = 1 μs, t_p ≥ 6 μs
10
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 2.5 ms
(4) PGM = 10 W, tp = 5 ms
1
0.1
0.0001
V_GD
I_GD
0.001
(4) (3) (2) (1)
b) a)
50TPS12L Series
0.01
0.1
1
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Frequency limited by PG(AV)
10
100
1000
Revision: 04-Oct-16
4
Document Number: 95867
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