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VS-50TPS12L-M3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR, 50 A
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VS-50TPS12L-M3
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range TJ, TStg
Maximum thermal resistance, junction to case
RthJC
Maximum thermal resistance, junction to ambient
RthJA
Typical thermal resistance, case to heatsink
Mounting torque
minimum
maximum
RthCS
Mounting surface, smooth, and greased
Marking device
Case style Super TO-247L
TYP. MAX. UNITS
-40
150
°C
-
0.35
-
40
°C/W
0.2
-
6 (5)
12 (10)
kgf · cm
(lbf · in)
50TPS12L
RthJ-HS CONDUCTION PER JUNCTION
DEVICE
SINE HALF-WAVE CONDUCTION
180°
120°
90°
60°
30°
VS-50TPS12L-M3
0.143 0.166 0.208 0.299 0.490
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
0.099 0.168 0.223 0.311 0.494
UNITS
°C/W
150
RthJC (DC) = 0.35 °C/W
140
30°
130
60°
Ø
Conduction Angle
90°
120
120°
110
180°
100
90
0
10
20
30
40
50
60
Average On - state Current (A)
Fig. 1 - Current Rating Characteristics
150
140
30°
130
120
110
100
RthJC (DC) = 0.35 °C/W
DC°
Ø
Conduction Angle
60°
90°
120°
180°
90
0
10 20 30 40 50 60 70 80
Average On- state Current (A)
Fig. 2 - Current Rating Characteristics
90
180°
80
120°
90°
70
60°
60
30°
50
40 RMS limit
30
20
10
0
0
Ø
Conduction Angle
Tj = 150 °C
10
20
30
40
50
60
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
110
100
180°
120°
90
90°
80
60°
30°
DC
70
60
50 RMS limit
40
Ø
30
Conduction Angle
20
10
0
0
Tj = 150 °C
10 20 30 40 50 60 70 80
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 04-Oct-16
3
Document Number: 95867
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