VS-50TPS12L-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR, 50 A

www.vishay.com
VS-50TPS12L-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
Maximum continuous RMS on-state 
current as AC switch
I_T(AV)
I_T(RMS)
T_C = 112 °C, 180° conduction half sine wave
Peak, one-cycle non-repetitive surge current I_TSM
I²t for fusing
I²t
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
Initial T_J = T_J
maximum
I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
I²ïƒ–t
V_T(TO)1
V_T(TO)2
r_t1
r_t2
On-state voltage
V_T
Rate of rise of turned-on current
Holding current
Latching current
dI/dt
I_H
I_L
Reverse and direct leakage current
I_RRM/I_DRM
Rate of rise of off-state voltage
dV/dt
t = 0.1 ms to 10 ms, no voltage reapplied, T_J = 125 °C
T_J = 125 °C
50 A, T_J = 25 °C
100 A, T_J = 25 °C
T_J = 25 °C
Anode supply = 6 V, resistive load, T_J = 25 °C
T_J = 25 °C
T_J = 125 °C
T_J = T_J maximum, linear to 80 % V_DRM, R_g-k = 
TYP. MAX. UNITS
-
50
-
79
A
-
530
-
630
- 1405
A²s
- 1986
- 19 850 A²ïƒ–s
- 0.89
V
- 0.97
- 6.77
m
- 6.32
1.2 1.32
V
1.4 1.6
-
150 A/μs
-
300
-
350
mA
- 0.05
-
10
- 1000 V/μs
TRIGGERING
PARAMETER
Peak gate power
Average gate power
Peak gate current
Peak negative gate voltage
Required DC gate voltage to trigger
Required DC gate to trigger
DC gate voltage not to trigger
DC gate current not to trigger
SYMBOL
TEST CONDITIONS
P_GM
P_G(AV)
I_GM
-V_GM
V_GT
I_GT
V_GD
I_GD
10 ms sine pulse, no voltage reapplied
T_J = -40 °C
T_J = 25 °C
T_J = 150 °C
T_J = -40 °C
T_J = 25 °C
T_J = 150 °C
Anode supply = 6 V resistive load
Anode supply = 6 V resistive load
T_J = 150 °C, V_DRM = rated value
TYP.
-
-
-
-
-
-
-
-
45
-
-
-
MAX. UNITS
10
W
2.5
2.5
A
10
1.6
V
1.5
1
160
100 mA
60
0.2
V
3
mA
SWITCHING
PARAMETER
Turn-on time
Turn-off time
SYMBOL
t_gt
t_q
TEST CONDITIONS
TYP.
I_T = 50 A, V_D = 50 % V_DRM, I_gt = 300 mA, T_J = 25 °C
1.5
I_T = 50 A, V_D = 80 % V_DRM, dV/dt = 20 V/μs, t_p = 200 μs 
I_gt = 100 mA, dI/dt = 10 A/μs, V_R = 100 V, T_J = 150 °C
92
MAX. UNITS
-
μs
-
Revision: 04-Oct-16
2
Document Number: 95867
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000