UFB120FA20P_10 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
150
140
130
120
DC
110
100 ^{Square wave (D = 0.50)}
80% Rated Vr applied
90 _{see note (1)}
80
0 10 20 30 40 50 60 70
Average Forward Current - I_F(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Diode)
60
RMS Limit
50
40
DC
30
D = 0.01
D = 0.02
20
D = 0.05
D = 0.10
D = 0.20
10
D = 0.50
0
0 10 20 30 40 50 60 70
Average Forward Current - I_F(AV)(A)
Fig. 6 - Forward Power Loss (Per Diode)
80
If = 50A
70
Vrr = 200V
60
Tj = 125˚C
50
40
Tj = 25˚C
30
20
10
0
100
1000
dI_F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
800
If = 50A
700 _{Vrr = 200V}
600
500
Tj = 125˚C
400
300
200
100
Tj = 25˚C
0
100
1000
dI_F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
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Revision: 21-Jul-10