UFB120FA20P_10 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A

UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 60 A
I_F = 60 A, T_J = 150 °C
V_R = V_R rated
T_J = 150 °C, V_R = V_R rated
V_R = 200 V
200
-
-
0.96
-
0.79
-
-
-
-
-
105
MAX.
-
1.13
0.90
100
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
-
28
Reverse recovery time
t_rr
T_J = 25 °C
-
32
-
Peak recovery current
Reverse recovery charge
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
64
-
I_F = 50 A
-
4.0
-
dI_F/dt = 200 A/μs
V_R = 100 V
-
8.2
-
-
64
-
-
263
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single diode conducting
Junction to case,
both diodes conducting
Case to heatsink
Weight
R_thJC
R_thCS
Flat, greased surface
Mounting torque
MIN.
-
-
-
-
-
TYP.
0.8
0.4
0.05
30
1.3
MAX. UNITS
1.1
0.55
K/W
-
-
g
-
Nm
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For technical questions within your region, please contact one of the following: Document Number: 94522
[e-mail], [e-mail], [e-mail]
Revision: 21-Jul-10