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UFB120FA20P_10 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 120 A
Insulated Ultrafast
Rectifier Module, 120 A
UFB120FA20P
Vishay Semiconductors
1000
100
10
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
100
Tj = 150˚C
10
125˚C
1
0.1
25˚C
0.01
0.001
0
50
100 150 200
Reverse Voltage-VR(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 25˚C
1
0.2
0.6
1
1.4
1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
10
100
1
10
100
Reverse Voltage-VR(V)
1000
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Single Pulse
(Thermal Impedance)
PDM
0.1
0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.1
1
10
t1,Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC (Per Diode)
Document Number: 94522 For technical questions within your region, please contact one of the following:
Revision: 21-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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