U290 Datasheet, PDF (4/5 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

U290/291
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Output Conductance vs. Drain Current
20
V_GS(off) = −5 V
10
V_DS = 10 V
f = 1 kHz
Noise Voltage vs. Frequency
100
V_DG = 10 V
T_A = −55_C
1
125_C
25_C
10
I_D = 10 mA
0.1
1
10
100
I_D − Drain Current (mA)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
300
30
g_fs and g_os @ V_DS = 10 V
V_GS = 0 V, f = 1 kHz
260
24
220
g_fs
18
g_os
180
12
140
6
100
0
−2
−4
−6
−8
V_GS(off) − Gate-Source Cutoff Voltage (V)
0
−10
SWITCHING TIME TEST CIRCUIT
V_GS(L)
R_L*
I_D(on)
* Non-Inductive
U290
−12 V
50 W
28 mA
U291
−7 V
50 W
27 mA
Input Pulse
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
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4
1
10
100
1k
10 k
f − Frequency (Hz)
100 k
100 nA
10 nA
1 nA
100 pA
Gate Leakage Current
T_A = 125_C
100 mA
I_GSS @ 125_C
25 mA
T_A = 25_C
100 mA
25 mA
10 pA
I_GSS @ 25_C
1 pA
0
4
8
12
16
20
V_DG − Drain-Gate Voltage (V)
V_DD
V_GS(H)
V_GS(L)
V_IN
Scope
R_L
OUT
1 kW
51 W
51 W
Document Number: 70235
S-41139—Rev. A, 07-Jun-04