U290 Datasheet, PDF (3/5 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

U290/291
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Temperature
10
I_D = 10 mA
r_DS changes X 0.7%/_C
8
Output Characteristics
500
V_GS(off) = −5 V
V_GS = 0 V
400
−0.5 V
6
V_GS(off) = −3 V
300
−1.0 V
−5 V
4
−8 V
2
0
−55 −35 −15 5 25 45 65 85 105 125
T_A − Temperature (_C)
Turn-On Switching
t_r approximately independent of I_D
V_DD = 1.5 V, R_G = 50 W
V_GS(L) = −10 V
−1.5 V
200
−2.0 V
100
−2.5 V
−3.0 V
0
2
4
6
8
10
V_DS − Drain-Source Voltage (V)
Turn-Off Switching
20
t_d(off) independent of device V_GS(off)
V_DD = 1.5 V, V_GS(L) = −10 V
16
t_r
t_d(on) @ I_D = 30 mA
8
4
t_d(on) @ I_D = 10 mA
0
0
−2
−4
−6
−8
−10
V_GS(off) − Gate-Source Cutoff Voltage (V)
12
t_d(off)
8
t_f
V_GS(off) = −3 V
4
V_GS(off) = −8 V
0
0
10
20
30
40
50
I_D − Drain Current (mA)
Capacitance vs. Gate-Source Voltage
150
V_DS = 0 V
f = 1 MHz
120
90
C_iss
60
C_rss
30
0
0
−4
−8
−12
−16
−20
V_GS − Gate-Source Voltage (V)
Document Number: 70235
S-41139—Rev. A, 07-Jun-04
Transconductance vs. Drain Current
200
V_GS(off) = −5 V
V_DS = 10 V
f = 1 kHz
100
T_A = −55_C
10
125_C
25_C
1
1
10
100
I_D − Drain Current (mA)
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