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U290 Datasheet, PDF (2/5 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor
U290/291
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
V(BR)GSS
VGS(off)
IDSS
Gate Reverse Current
Gate Operating Currentb
IGSS
IG
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductanceb
Common-Source Output Conductanceb
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Switching
ID(off)
rDS(on)
VGS(F)
gfs
gos
rds(on)
Ciss
Crss
en
IG = −1 mA , VDS = 0 V
VDS = 15 V, ID = 3 nA
VDS = 10 V, VGS = 0 V
VGS = −15 V, VDS = 0 V
TA = 125_C
VDG = 10 V, ID = 25 mA
VDS = 5 V, VGS = −10 V
TA = 125_C
VGS = 0 V, ID = 1 mA
IG = 1 mA , VDS = 0 V
VDS = 10 V, ID = 25 mA, f = 1 kHz
VGS = 0 V, ID = 1 mA, f = 1 kHz
VDS = 0 V, VGS = 0 V, f = 1 MHz
VDS = 0 V, VGS = −15 V, f = 1 MHz
VDG = 10 V, ID = 25 mA, f = 1 kHz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 1.5 V, VGS(H) = 0 V
See Switching Diagram
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
Typa
Limits
U290
U291
Min Max Min Max
Unit
−35 −30
−30
V
−4.0 −10 −1.5 −4.5
500
200
mA
−0.02
−1
−1
nA
−0.01
−1
−1
mA
−0.01
0.01
1
nA
1
−0.005
1
1
mA
3
7
W
0.7
V
55
mS
5
3
7
W
120
160
160
pF
20
30
30
3
nV⁄√Hz
6
15
15
8
20
20
ns
5
15
15
9
20
20
NVA
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10
2 .0
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
8
1.6
On-Resistance vs. Drain Current
20
TA = 25_C
16
6
rDS
IDSS
1.2
12
VGS(off) = −3 V
4
0.8
2
0.4
0
0
0
−2
−4
−6
−8
−10
VGS(off) − Gate-Source Cutoff Voltage (V)
8
4
0
10
−5 V
−8 V
100
ID − Drain Current (mA)
1000
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Document Number: 70235
S-41139—Rev. A, 07-Jun-04